Method of manufacturing transistor and method of...

Semiconductor device manufacturing: process – Making field effect device having pair of active regions... – On insulating substrate or layer

Reexamination Certificate

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C257S072000, C257SE21414, C257SE29003

Reexamination Certificate

active

07846787

ABSTRACT:
A method of manufacturing a transistor and a method of manufacturing an organic electroluminescence display are disclosed. When an amorphous silicon layer is crystallized, a silicon oxide layer formed on a polysilicon layer is subsequently patterned. Impurity ions are implanted into first and second regions of the amorphous silicon layer to form first and second doped regions. The silicon oxide layer is patterned so that the silicon oxide layer may be removed from an ohmic contact region of the polysilicon layer, and covers only a channel region of the polysilicon layer.

REFERENCES:
patent: 5262344 (1993-11-01), Mistry
patent: 6388270 (2002-05-01), Yamazaki et al.
patent: 2007/0042536 (2007-02-01), Chen et al.
patent: 2008/0315207 (2008-12-01), Yang et al.
patent: 11330477 (1999-11-01), None
patent: 1019990036851 (1999-05-01), None
patent: 1020050098122 (2005-10-01), None
Dictionary.com Unabridged. Random House, Inc. Mar. 22, 2010. <Dictionary.com http://dictionary.reference.com/browse/around>.

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