Semiconductor device manufacturing: process – Making field effect device having pair of active regions... – Having insulated gate
Reexamination Certificate
2005-03-29
2005-03-29
Nelms, David (Department: 2818)
Semiconductor device manufacturing: process
Making field effect device having pair of active regions...
Having insulated gate
C257S328000
Reexamination Certificate
active
06872611
ABSTRACT:
A technique is provided which makes it possible to reduce the area of a power MOSFET. A power MOSFET1according to the invention is a trench type in which a source region27is exposed on both of a substrate top surface51and an inner circumferential surface52of a trench18. Since this makes it possible to provide contact between the source region27and a source electrode film29not only on the substrate top surface51but also on the inner circumferential surface52of the trench18, source contact is provided with a sufficiently low resistance only on the substrate top surface, and the area of the device can be made smaller than that in the related art in which the source region27has been formed in a larger area.
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Takemori Toshiyuki
Watanabe Yuji
Armstrong Kratz Quintos Hanson & Brooks, LLP
Le Thao P.
Nelms David
Shindengen Electric Manufacturing Co. Ltd.
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