Method of manufacturing through holes in a semiconductor device

Details Method of manufacturing through holes in a semiconductor device Method of manufacturing through holes in a semiconductor device

1997-11-24

2000-02-08

Fahmy, Wael

Semiconductor device manufacturing: process

Coating with electrically or thermally conductive material

To form ohmic contact to semiconductive material

438638, 438666, 438672, H01L 214763, H01L 2348

Patent

active

060227974

ABSTRACT:
First through holes of a relatively small diameter and second through holes of a relatively great diameter are formed in proper shapes by separate processes, respectively, in a first layer insulating film. The second through holes are tapered toward a layer underlying the first layer insulating film. First, the first through holes are formed in the first layer insulating film, the first through holes are filled up with plug electrodes, and the second through holes are formed in the first layer insulating film. When filling up the first and the second through holes formed in the first layer insulating film with plug electrodes, a first conductive film deposited over the first layer insulating film is etched back to fill up the first through holes with the plug electrodes, and then etch back residues remaining on the side walls of the second through holes are removed.

REFERENCES:
patent: 4753709 (1988-06-01), Welch et al.
patent: 5187119 (1993-02-01), Cech et al.
patent: 5231751 (1993-08-01), Sachdev
patent: 5736679 (1998-04-01), Kresge et al.
patent: 5801094 (1998-09-01), Yew et al.
patent: 5818110 (1998-10-01), Cronin
patent: 5847466 (1998-12-01), Ito et al.
U.S. Application No. 08/838,260, Apr. 17, 1997, U.S. Patent Application Now US Patent 5,892,276.

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