Semiconductor device

Details Semiconductor device Semiconductor device

1992-09-30

1996-02-27

Crane, Sara W.

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

257383, 257408, H01L 2702

Patent

active

054951216

ABSTRACT:
A semiconductor device or a semiconductor integrated circuit includes a field effect transistor having a source region, a drain region and a channel regions formed within a semiconductor substrate. A lower wiring is formed on the semiconductor substrate to form a gate electrode and its extension and oxidized to form an oxide film covering the lower wiring. An upper wiring is formed over the lower wiring on the semiconductor substrate to make contact with the drain or source region. The lower wiring is electrically insulated from the upper wiring by the oxide film.

REFERENCES:
patent: 4149307 (1979-04-01), Henderson
patent: 4221045 (1980-09-01), Godejahn, Jr.
patent: 4593454 (1986-06-01), Baudrant et al.
patent: 4613956 (1986-09-01), Paterson et al.
patent: 4943836 (1990-07-01), Mori
patent: 5101249 (1992-03-01), Hijiya et al.
patent: 5172200 (1992-12-01), Muragishi et al.
patent: 5289030 (1994-02-01), Yamazaki et al.

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