Semiconductor device manufacturing: process – Making field effect device having pair of active regions... – Having insulated gate
Reexamination Certificate
2005-02-22
2005-02-22
Pham, Hoai (Department: 2814)
Semiconductor device manufacturing: process
Making field effect device having pair of active regions...
Having insulated gate
C438S244000, C438S386000
Reexamination Certificate
active
06858491
ABSTRACT:
A semiconductor manufacturing method wherein a trench is formed in an SOI substrate. A first insulating film is formed in the trench, wherein the first insulating film has a depth to reach an upper surface of a buried insulating film. A second insulating film is formed in a sidewall portion of the trench above the first insulating film, wherein the second insulating film is made of a material different from that of the first insulating film. The first insulating film is etched backed to a depth as to reach an upper surface of the buried insulating film, by using the second insulating film as a mask. The buried insulating film, exposed to the sidewall portion of the trench, is recessed. An epitaxial layer is formed in a gap created by the recessed buried insulating film. The first and second insulating films are removed, and a trench capacitor is formed in the trench.
REFERENCES:
patent: 5525531 (1996-06-01), Bronner et al.
patent: 6228706 (2001-05-01), Horak et al.
patent: 6333532 (2001-12-01), Davari et al.
patent: 6365485 (2002-04-01), Shiao et al.
Kabushiki Kaisha Toshiba
Pham Hoai
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