Semiconductor device manufacturing: process – Making field effect device having pair of active regions... – On insulating substrate or layer
Reexamination Certificate
2010-06-09
2011-11-15
Ngo, Ngan (Department: 2893)
Semiconductor device manufacturing: process
Making field effect device having pair of active regions...
On insulating substrate or layer
C438S155000, C438S280000, C257SE21586, C257SE21409
Reexamination Certificate
active
08058114
ABSTRACT:
A gate line includes a first seed layer formed on a base substrate and a first metal layer formed on the first seed layer. A first insulation layer is formed on the base substrate. A second insulation layer is formed on the base substrate. Here, a line trench is formed through the second insulation layer in a direction crossing the gate line. A data line includes a second seed layer formed below the line trench and a second metal layer formed in the line trench. A pixel electrode is formed in a pixel area of the base substrate. Therefore, a trench of a predetermined depth is formed using an insulation layer and a metal layer is formed through a plating method, so that a metal line having a sufficient thickness may be formed.
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Bae Yang-Ho
Choung Jong-Hyun
Hong Sun-Young
Jeong Chang-Oh
Kim Bong-Kyun
Innovation Counsel LLP
Ngo Ngan
Samsung Electronics Co,. Ltd.
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