Method of manufacturing SRAM cell

Details Method of manufacturing SRAM cell Method of manufacturing SRAM cell

1997-03-27

1999-09-28

Tsai, Jey

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

438241, H01L 218244

Patent

active

059602783

ABSTRACT:
The present invention introduces an SRAM cell which enhances immunity to soft errors and a manufacturing method thereof. A method of manufacturing an SRAM cell having access devices, pull-up devices and pull-down devices and forming a cell node junction in common junction regions of the pull-down devices and the access devices, the manufacturing method including the steps of: providing a semiconductor substrate of which active regions are difined and gate insulating layers and gates are formed on thereof; forming N.sup.- junction regions in the substrates of both sides of the gates for the pull-down devices region and the access devices region, wherein the N.sup.- junction regions formed in the cell node are separated therein and are adjacent to the gates thereof; forming the insulating layer spacers on both side-walls of the gates; and forming N.sup.+ junction regions in the substrate of both side of the spacers for the pull-down devices region and the access devices region.

REFERENCES:
patent: 4499652 (1985-02-01), Shrivastava
patent: 5047818 (1991-09-01), Tsukamoto
patent: 5324973 (1994-06-01), Sivan
patent: 5354704 (1994-10-01), Yang et al.
patent: 5396098 (1995-03-01), Kim et al.
patent: 5741735 (1998-04-01), Violette et al.

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