Method of manufacturing split gate type nonvolatile memory...

Details Method of manufacturing split gate type nonvolatile memory... Method of manufacturing split gate type nonvolatile memory...

2006-05-02

2006-05-02

Chen, Jack (Department: 2813)

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

C438S266000, C438S267000

Reexamination Certificate

active

07037783

ABSTRACT:
A method of manufacturing a split gate type nonvolatile semiconductor memory device in which control gates are formed by a self aligning process.

REFERENCES:
patent: 6486032 (2002-11-01), Lin et al.
patent: 2001-085544 (2001-03-01), None
patent: 1020010091532 (2001-10-01), None

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