Semiconductor device manufacturing: process – Making field effect device having pair of active regions... – Having insulated gate
Reexamination Certificate
2006-12-27
2009-02-10
Chaudhari, Chandra (Department: 2891)
Semiconductor device manufacturing: process
Making field effect device having pair of active regions...
Having insulated gate
C257SE21682
Reexamination Certificate
active
07488649
ABSTRACT:
A method of manufacturing a split gate type non-volatile memory device includes the steps of defining an active region on a semiconductor substrate; forming a pair of first conductive film patterns, each having an electric charge storage layer interposed between the substrate and the first conductive film pattern, on the active region; forming a second conductive film on top of the first conductive film patterns and a remainder of the active region; etchbacking the entire surface of the second conductive film to planarize a top of the second conductive film formed between the first conductive film patterns; forming a photoresist pattern, with an opening corresponding to the active region between the first conductive film patterns, on the second conductive film; and forming a pair of split gates each having one of the first conductive film patterns and a second conductive film pattern formed by patterning the second conductive film using the photoresist pattern as an etching mask.
REFERENCES:
patent: 6117733 (2000-09-01), Sung et al.
patent: 6124609 (2000-09-01), Hsieh et al.
patent: 6838343 (2005-01-01), Hung et al.
Chaudhari Chandra
Dongbu Electronics Co. Ltd.
Lowe Hauptman & Ham & Berner, LLP
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