Method of manufacturing silicon topological capacitors

Details Method of manufacturing silicon topological capacitors Method of manufacturing silicon topological capacitors

2007-02-27

2010-11-09

Chen, Jack (Department: 2893)

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

C438S381000, C438S700000, C257SE21008

Reexamination Certificate

active

07829409

ABSTRACT:
In accordance with the present invention, a novel method to fabricate topological capacitors is provided. The fabrication method of the instant invention is based upon a reversed surface topology utilizing deep reactive ion etching to establish conductive capacitive elements and non-conductive capacitive element groups.

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