Method of manufacturing silicon nanowires using silicon...

Details Method of manufacturing silicon nanowires using silicon... Method of manufacturing silicon nanowires using silicon...

2011-07-26

2011-07-26

Picardat, Kevin M (Department: 2822)

Semiconductor device manufacturing: process

Formation of semiconductive active region on any substrate

Fluid growth from gaseous state combined with preceding...

C438S482000, C438S488000, C438S492000, C438S507000, C977S762000, C977S778000, C977S891000, C977S932000

Reexamination Certificate

active

07985666

ABSTRACT:
Provided is a method of manufacturing silicon nanowires including: forming a silicon nanodot thin film having a plurality of silicon nanodots exposed on a substrate; and growing the silicon nanowires on the silicon nanodot thin film using the silicon nanodots as a nucleation site. The silicon nanowires can be manufactured using the silicon nanodot thin film disposed in a silicon nitride matrix, as a nucleation site instead of using catalytic metal islands, wherein the silicon nanodot thin film includes the silicon nanodots.

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