Method of manufacturing semiconductor resistors

Details Method of manufacturing semiconductor resistors Method of manufacturing semiconductor resistors

1998-05-28

2000-10-24

Monin, Jr., Donald L.

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

438210, 438329, 257380, 257379, 257528, H01L 218238, H01L 218222, H01L 2976, H01L 2900

Patent

active

06136634&

ABSTRACT:
A high-resistance polycrystalline Si resistor having a stable resistance value even when micro-sized and a low-resistance polycrystalline Si resistor having a sufficiently low desired resistance value wherein a polycrystalline Si film is formed on an insulation film located on a Si substrate, high-resistance-making ion implantation is applied to the entire surface and medium-resistance-making ion implantation is selectively applied to a medium-resistance-making region of the polycrystalline Si film. Low-resistance-making ion implantation is selectively applied to a low-resistance-making region of the polycrystalline Si film. The product is annealed to grow the polycrystalline Si film by solid-phase growth, the film is patterned to form a high-resistance polycrystalline Si resistor, medium-resistance polycrystalline Si resistor, and low-resistance polycrystalline Si resistor.

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patent: 5356825 (1994-10-01), Hozumi et al.
patent: 5489547 (1996-02-01), Erdeljac et al.

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