Method of manufacturing semiconductor memory device, and...

Details Method of manufacturing semiconductor memory device, and... Method of manufacturing semiconductor memory device, and...

2009-11-19

2011-11-22

Luu, Chuong A. (Department: 2892)

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

C438S199000, C438S253000, C438S396000

Reexamination Certificate

active

08062940

ABSTRACT:
A method of manufacturing semiconductor memory device comprises forming a first wiring layer and a memory cell layer above a semiconductor substrate; forming a plurality of first trenches extending in a first direction in the first wiring layer and the memory cell layer, thereby forming first wirings and separating the memory cell layer; burying a first interlayer film in the first trenches to form a stacked body; forming a second wiring layer above the stacked body; forming a plurality of second trenches, extending in a second direction intersecting the first direction and reaching an upper surface of the first interlayer film in depth, in the first stacked body with the second wiring layer formed thereabove, thereby forming second wirings; removing the first interlayer film isotropically; and digging the second trenches down to an upper surface of the first wirings, thereby forming memory cells.

REFERENCES:
patent: 6130450 (2000-10-01), Kohyama et al.
patent: 7317208 (2008-01-01), You
patent: 7697317 (2010-04-01), Shimaoka et al.
patent: 2006/0124980 (2006-06-01), Kohyama et al.
patent: 2008/0258129 (2008-10-01), Toda
patent: 2009/0046495 (2009-02-01), Shimaoka et al.
patent: 09-097880 (1997-04-01), None
patent: 2005-522045 (2005-07-01), None
patent: 2006-344349 (2006-12-01), None
patent: 2009-130139 (2009-06-01), None
Notice Concerning Filing of Arguments issued by the Korean Intellectual Property Office on Jun. 27, 2011, for Korean Patent Application No. 10-2010-3127, and English-language translation thereof.

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