Method of manufacturing semiconductor light emitting device

Details Method of manufacturing semiconductor light emitting device Method of manufacturing semiconductor light emitting device

1996-08-22

1998-08-11

Kunemund, Robert

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

438289, 117 89, 117 93, 117102, H01L 2120

Patent

active

057926980

ABSTRACT:
A method of manufacturing a semiconductor light emitting device employs an MOCVD process. The method sequentially forms, on a GaAs substrate, at least an InGaAlP clad layer, an active layer, an InGaAlP clad layer, a GaAlAs or InGaAlP current diffusion layer, and a GaAlAs or InGaAlP light scattering layer. The flow-rate ratio (V/III ratio) of a V-group source gas to a III-group source gas for forming the light scattering layer is smaller than that for forming the current diffusion layer. As a result, the surface of the light scattering layer is roughened to improve light emission efficiency.

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