Semiconductor device manufacturing: process – Making field effect device having pair of active regions... – Having insulated gate
Reexamination Certificate
2006-09-19
2006-09-19
Lindsay, Jr., Walter L. (Department: 2812)
Semiconductor device manufacturing: process
Making field effect device having pair of active regions...
Having insulated gate
C438S199000, C257SE21301, C257SE21637
Reexamination Certificate
active
07109076
ABSTRACT:
Mutual diffusion of impurities in a gate electrode is suppressed near a boundary between an n-channel type MISFET and a p-channel type MISFET, which adopt a polycide's dual-gate structure. Since a gate electrode of an n-channel type MISFET and a gate electrode of a p-channel type MISFET are of mutually different conductivity types, they are separated to prevent the mutual diffusion of the impurities and are electrically connected to each other via a metallic wiring formed in the following steps. In a step before a gate electrode material is patterned to separate the gate electrodes, the mutual diffusion of the impurities before forming the gate electrodes is prevented by performing no heat treatment at a temperature of 700° C. or higher.
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Asaka Katsuyuki
Hasegawa Masatoshi
Matsumoto Daichi
Mori Kazutaka
Sakai Satoshi
Lindsay Jr. Walter L.
Miles & Stockbridge P.C.
Renesas Technology Corp.
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