Semiconductor device manufacturing: process – Making field effect device having pair of active regions... – Having insulated gate
Reexamination Certificate
2003-10-03
2010-06-08
Richards, N Drew (Department: 2895)
Semiconductor device manufacturing: process
Making field effect device having pair of active regions...
Having insulated gate
C438S229000, C438S513000, C438S595000, C438S660000, C438S682000
Reexamination Certificate
active
07732272
ABSTRACT:
A method of manufacturing a semiconductor device includes a process of forming a gate electrode having a metallic silicide layer on a semiconductor substrate, a process of decreasing boundaries of grains on the surface of the metallic silicide layer, at least a portion of which is exposed, and a process of forming spacers comprising an oxide film on the side wall of the gate electrode; in this order. Thus, abnormal oxidation of the metallic silicide layer is avoided.
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Mori Hirotaka
Ohsako Takashi
Yoshida Katsuji
Garcia Joannie A
Oki Semiconductor Co., Ltd.
Richards N Drew
Wenderoth , Lind & Ponack, L.L.P.
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