Method of manufacturing semiconductor device with increased focu

Details Method of manufacturing semiconductor device with increased focu Method of manufacturing semiconductor device with increased focu

1998-01-28

2000-05-09

Tsai, Jey

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

438637, H01L 218242

Patent

active

060603526

ABSTRACT:
A method for fabricating DRAMs each having a COB structure, and the semiconductor device formed by this method, are provided. In one embodiment, the word line and/or bit line is covered with an insulating film having a comparatively small etching rate. Contact holes are formed while being defined by those insulating films in self-alignment.

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patent: 5403767 (1995-04-01), Kim
patent: 5521112 (1996-05-01), Tseng
patent: 5597754 (1997-01-01), Lou et al.
patent: 5620917 (1997-04-01), Yoon et al.

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