Method of manufacturing semiconductor device using STI...

Details Method of manufacturing semiconductor device using STI... Method of manufacturing semiconductor device using STI...

2005-08-23

2005-08-23

Le, Dung A. (Department: 2818)

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

C438S258000, C438S593000, C257S314000, C257S315000, C257S316000

Reexamination Certificate

active

06933194

ABSTRACT:
A method of manufacturing a semiconductor device including forming a laminate structure which includes a gate insulation film on a semiconductor substrate and a gate electrode material film on the gate insulation film, processing the gate electrode material film to obtain a gate electrode having a reverse tapered cross section, and forming a device isolation insulation film in direct contact with a side surface of the gate electrode.

REFERENCES:
patent: 4389294 (1983-06-01), Anantha et al.
patent: 5950090 (1999-09-01), Chen et al.
patent: 5973353 (1999-10-01), Yang et al.
patent: 6222225 (2001-04-01), Nakamura et al.
patent: 6232635 (2001-05-01), Wang et al.
patent: 3-71781 (1991-11-01), None
patent: 8-227935 (1996-09-01), None
patent: 2000-232155 (2000-08-01), None
patent: 0174314 (1998-11-01), None

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