Method of manufacturing semiconductor device that includes...

Details Method of manufacturing semiconductor device that includes... Method of manufacturing semiconductor device that includes...

2006-02-28

2008-10-07

Smoot, Stephen W (Department: 2813)

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

C438S294000, C438S424000, C438S703000, C257SE21545

Reexamination Certificate

active

07432163

ABSTRACT:
A method of manufacturing a semiconductor device comprises the steps of: preparing a semiconductor substrate, the semiconductor substrate having first and second predetermined regions; forming a first field region surrounding the first predetermined region; forming a second field region surrounding the second predetermined region while a separating region exists between adjacent first and second field regions; forming a first insulation film on the semiconductor substrate; forming a resist pattern on the first insulation film, the resist pattern covering the first predetermined region and a part of the separating region; exposing the second predetermined region by etching the first insulation film using the resist pattern as a mask; forming a second insulation film on the second predetermined region; and forming gate electrodes on the first and second insulation films.

REFERENCES:
patent: 6380020 (2002-04-01), Shimizu
patent: 6787410 (2004-09-01), Iwata et al.
patent: 2003/0134479 (2003-07-01), Salling et al.
patent: 2003/0228725 (2003-12-01), Tsujikawa et al.
patent: 2003/0235964 (2003-12-01), Wolstenholme et al.
patent: 2000/150665 (2000-05-01), None
patent: 2000/200836 (2000-07-01), None

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