Method of manufacturing semiconductor device including light etc

Details Method of manufacturing semiconductor device including light etc Method of manufacturing semiconductor device including light etc

1998-02-20

2000-05-16

Sergent, Rabon

Etching a substrate: processes

Gas phase etching of substrate

With measuring, testing, or inspecting

134 11, 134 12, 216 60, 216 64, 216 67, 216 72, 216 79, 216 80, 438714, 438715, 438718, 438723, 438743, 438756, H01L 213065, G01K 548, C03C 1500, B44C 122

Patent

active

06063300&

ABSTRACT:
A method of manufacturing a semiconductor device, including the steps of: cooling a semiconductor wafer to a predetermined temperature, the semiconductor wafer being mounted on a stage provided with cooling means and having a thin oxide film on a surface thereof; supplying energy to gas containing hydrogen and water vapor to excite the gas into a plasma state; adding nitrogen fluoride downstream into a flow of the gas in the plasma state; and introducing a flow of the gas, including the nitrogen fluoride, to the semiconductor wafer to etch the thin oxide film while maintaining the semiconductor wafer at the predetermined temperature.

REFERENCES:
patent: 4807016 (1989-02-01), Douglas
patent: 5620559 (1997-04-01), Kikuchi
patent: 5885361 (1999-03-01), Kikuchi et al.

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