Semiconductor device manufacturing: process – Making field effect device having pair of active regions... – Having insulated gate
Reexamination Certificate
2006-10-03
2006-10-03
Toledo, Fernando L. (Department: 2823)
Semiconductor device manufacturing: process
Making field effect device having pair of active regions...
Having insulated gate
C438S263000, C438S264000, C438S276000, C257SE21690
Reexamination Certificate
active
07115471
ABSTRACT:
There is provided a method of manufacturing a semiconductor device including a nonvolatile memory including forming an element isolation area surrounding an element area in a semiconductor substrate doped with a first type conductive impurity, forming a gate insulating film on the element area, forming selectively a cap film on the gate insulating film, burying selectively with a mask film surrounding the cap film on the gate insulating film, forming a tunnel window by removing selectively the cap film, forming an impurity diffusion layer in a surface region of the semiconductor substrate underneath the gate insulating film by introducing a second type conductive impurity using the mask film as a mask, removing the gate insulating film in the tunnel window, forming a tunnel insulating film in the tunnel window, forming a floating gate electrode film, an inter-gate electrode film, and a control gate electrode film on the tunnel insulating film, and forming a source-drain in the semiconductor substrate to interpose a surface region of the semiconductor substrate beneath the control gate electrode film by introducing the second type conductive impurity into the surface region using the control gate electrode film as a mask.
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Kimitsuka Akira
Shinada Kazuyoshi
Kabushiki Kaisha Toshiba
Toledo Fernando L.
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