Method of manufacturing semiconductor device including...

Semiconductor device manufacturing: process – Making field effect device having pair of active regions... – Having insulated gate

Reexamination Certificate

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Details

C438S263000, C438S264000, C438S276000, C257SE21690

Reexamination Certificate

active

07115471

ABSTRACT:
There is provided a method of manufacturing a semiconductor device including a nonvolatile memory including forming an element isolation area surrounding an element area in a semiconductor substrate doped with a first type conductive impurity, forming a gate insulating film on the element area, forming selectively a cap film on the gate insulating film, burying selectively with a mask film surrounding the cap film on the gate insulating film, forming a tunnel window by removing selectively the cap film, forming an impurity diffusion layer in a surface region of the semiconductor substrate underneath the gate insulating film by introducing a second type conductive impurity using the mask film as a mask, removing the gate insulating film in the tunnel window, forming a tunnel insulating film in the tunnel window, forming a floating gate electrode film, an inter-gate electrode film, and a control gate electrode film on the tunnel insulating film, and forming a source-drain in the semiconductor substrate to interpose a surface region of the semiconductor substrate beneath the control gate electrode film by introducing the second type conductive impurity into the surface region using the control gate electrode film as a mask.

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patent: 6211017 (2001-04-01), Ono
patent: 6306690 (2001-10-01), Kaya et al.
patent: 6432762 (2002-08-01), Dalla Libera et al.
patent: 6586301 (2003-07-01), Orita
patent: 2003/0022447 (2003-01-01), Park et al.
patent: 3-20089 (1991-01-01), None
patent: 03-30078 (1991-03-01), None
patent: 11-330425 (1999-11-01), None

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