Semiconductor device manufacturing: process – Making field effect device having pair of active regions... – Having insulated gate
Reexamination Certificate
2005-01-18
2005-01-18
Lee, Eddie (Department: 2811)
Semiconductor device manufacturing: process
Making field effect device having pair of active regions...
Having insulated gate
C438S238000, C438S253000, C438S250000, C438S244000, C438S791000, C438S787000
Reexamination Certificate
active
06844229
ABSTRACT:
A method of manufacturing a semiconductor device having a storage electrode of a capacitor is provided. The method includes the steps of: forming a contact hole perforating through an interlayer dielectric layer on a semiconductor substrate; forming a conductive plug to fill the contact hole and expose the surface of the interlayer dielectric layer; forming molds on the interlayer dielectric layer to expose the surface of the conductive plug; recessing the upper surface of the conductive plug to expose a portion of the sidewalls of the interlayer dielectric layer; forming an electrode layer to cover the recessed conductive plug, and the sidewalls of the interlayer dielectric layer and the molds; and removing upper surfaces of the electrode layer to make a storage electrode until molds are exposed. The method further includes the steps of: forming a conductive pad electrically connected to the semiconductor substrate and a lower insulating layer surrounding the conductive pad; and forming bit line stacks on the lower insulating layer, wherein the interlayer dielectric layer covers the bit line stacks, and the contact hole between the bit line stacks exposes the conductive pad.
REFERENCES:
patent: 6180452 (2001-01-01), Figura
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Korean Patent Abstract—Publication No. 2001-0059014; Publication Date Jul. 6, 2001.
Chung Jong-ho
Ko Hyung-ho
Lee Moon-hee
Shim Woo-gwan
F. Chau & Associates LLC
Lee Eddie
Magee Thomas
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