Semiconductor device manufacturing: process – Making field effect device having pair of active regions... – Having insulated gate
Patent
1997-06-16
2000-07-04
Tsai, Jey
Semiconductor device manufacturing: process
Making field effect device having pair of active regions...
Having insulated gate
438382, H01L 2702
Patent
active
060837853
ABSTRACT:
An isolation is formed in a part of a P-well of a semiconductor substrate. A resistor film as a first conductor member is formed on the isolation. An insulating film covering the resistor film except for contact formation regions and an upper electrode film as a second conductor member are formed simultaneously with the formation of a gate electrode and a gate oxide film. Silicide films of a refractory metal are formed on the respective surfaces of the gate electrode, N-type high-concentration diffusion layers, the contact formation regions of the resistor film, and the upper electrode film. By utilizing a salicide process, a resistor and an inductor each occupying a small area can be formed without lowering the resistance of the resistor film. A capacitor, the resistor, and like component are selectively allowed to function.
REFERENCES:
patent: 4367580 (1983-01-01), Guterman
patent: 4866502 (1989-09-01), Tomaszewski et al.
patent: 4949153 (1990-08-01), Tadashi et al.
patent: 5187122 (1993-02-01), Bonis
patent: 5391906 (1995-02-01), Kiyoshi
patent: 5394284 (1995-02-01), Kaoru
patent: 5414291 (1995-05-01), Miwa et al.
patent: 5457062 (1995-10-01), Keller et al.
patent: 5500387 (1996-03-01), Yingsheng et al.
patent: 5500560 (1996-03-01), Kano
patent: 5597759 (1997-01-01), Yoshimori
patent: 5736421 (1998-04-01), Shimomura et al.
Patent Abstracts of Japan, vol. 016, No. 271 (E-1218), Jun. 18, 1992 & JP 04 054217 A (ROHM Co., Ltd.) Feb. 28, 1992 (Abstract).
Matsuzawa Akira
Segawa Mizuki
Yabu Toshiki
Matsushita Electric - Industrial Co., Ltd.
Tsai Jey
LandOfFree
Method of manufacturing semiconductor device having resistor fil does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Method of manufacturing semiconductor device having resistor fil, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Method of manufacturing semiconductor device having resistor fil will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-1485567