Semiconductor device manufacturing: process – Making field effect device having pair of active regions... – Having insulated gate
Reexamination Certificate
2006-10-31
2006-10-31
Tsai, H. Jey (Department: 2812)
Semiconductor device manufacturing: process
Making field effect device having pair of active regions...
Having insulated gate
C438S279000, C438S283000, C438S294000
Reexamination Certificate
active
07129137
ABSTRACT:
A method of manufacturing a semiconductor device includes forming a first insulating film having a first thickness in a first region on a semiconductor substrate, forming a first gate electrode on the first insulating film, and forming a second insulating film having a second thickness different from the first thickness on the semiconductor substrate and the first gate electrode. Then, the method includes forming a conductive film on the second oxide film and forming a first resist pattern and a second resist pattern respectively on the conductive film in the first region and on the conductive film of a second region different from the first region. Then, the method includes removing the conductive film by using the first resist pattern as a mask to form a second gate electrode covering the first gate electrode via the second insulating film and removing the conductive film by using the second resist pattern as a mask to form a third gate electrode on the second insulating film of the second region.
REFERENCES:
patent: 6482698 (2002-11-01), Peschiaroli et al.
patent: 2002/0119616 (2002-08-01), Baldi et al.
patent: 6-196639 (1994-07-01), None
iLighrue Mion, PLLC
NEC Corporation
Tsai H. Jey
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