Semiconductor device manufacturing: process – Coating with electrically or thermally conductive material – To form ohmic contact to semiconductive material
Patent
1998-06-25
2000-10-31
Bowers, Charles
Semiconductor device manufacturing: process
Coating with electrically or thermally conductive material
To form ohmic contact to semiconductive material
438622, 438623, 438624, 438634, 438700, 438735, 438736, 438738, H01L 214753, H01L 21311, H01L 21302, H01L 21461
Patent
active
061402257
ABSTRACT:
A first insulating film with a dielectric constant lower than that of a silicon oxide film is formed on a semiconductor substrate. Next, a second insulating film, which has degrees of moisture absorption and deformation in an oxygen plasma process and exposure to a resist releasing solution equal to or less than those of a silicon oxide film, is formed on the first insulating film. Then, a third insulating film, which has degrees of moisture absorption and deformation in an oxygen plasma process and exposure to a resist releasing solution equal to or less than those of a silicon oxide film are formed on the second insulating film. Thereafter, the third insulating film is patterned to a prescribed pattern. An opening is formed in the first and second insulating films using the third insulating film as a mask.
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"Process Technology for Devices" Monthly Semiconductor World, Feb. (1997); p. 82-84.
Aoki Hidemitsu
Tsuchiya Yasuaki
Usami Tatsuya
Yamasaki Shinya
Bowers Charles
NEC Corporation
Pham Thanhha
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