Method of manufacturing semiconductor device having multilayer i

Details Method of manufacturing semiconductor device having multilayer i Method of manufacturing semiconductor device having multilayer i

1998-01-20

2000-10-17

Whitehead, Jr., Carl

Semiconductor device manufacturing: process

Coating with electrically or thermally conductive material

To form ohmic contact to semiconductive material

438622, 438637, 438671, H01L 214763

Patent

active

061331384

ABSTRACT:
A method of manufacturing a semiconductor device copes with miniaturization owing to reduction in an overlapping margin. According to this manufacturing method, a conductive layer forming an upper interconnection layer is formed in an opening provided for connection to a lower interconnection layer, and then an organic polymer film filling a concavity at the conductive layer located in the opening is formed. After forming a resist pattern on the organic polymer film, organic polymer film and conductive layer are etched. The overlapping margin is reduced owing to the fact the organic polymer film fills the concavity at the conductive layer.

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