Method of manufacturing semiconductor device having MIM...

Details Method of manufacturing semiconductor device having MIM... Method of manufacturing semiconductor device having MIM...

2005-01-04

2005-01-04

Sarkar, Asok Kumar (Department: 2829)

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

C257S306000, C438S387000, C438S396000

Reexamination Certificate

active

06838340

ABSTRACT:
A method of manufacturing a semiconductor device includes forming a first interlayer insulation film on a semiconductor substrate, depositing a first metal film on the first interlayer insulation film, depositing an antireflection film including a dielectric layer on an upper surface of the first metal film, patterning the first metal film and the antireflection film to form a lower electrode having the antireflection film on an upper surface thereof, forming a second interlayer insulation film on the antireflection film, forming first and second openings in a first region and in a second region in the second interlayer insulation film, respectively, removing a portion of the antireflection film where the second opening is formed, depositing a second metal film on the second interlayer insulation film, and removing the second metal film except in the first and second openings to form an upper electrode in the first opening, and a contact in the second opening.

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