Method of manufacturing semiconductor device having mask layer f

Details Method of manufacturing semiconductor device having mask layer f Method of manufacturing semiconductor device having mask layer f

1996-09-04

1998-12-22

Niebling, John

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

438232, 438289, 438290, 438291, H01L 218238

Patent

active

058518657

ABSTRACT:
A gate oxide layer and a polysilicon layer are formed in sequence over the major surface of a semiconductor substrate. A photoresist layer is formed on the polysilicon layer and an opening is formed in the photoresist layer. Using the photoresist layer as a mask, boron is ion implanted through the polysilicon layer and the gate oxide layer into the semiconductor substrate. Phosphorus is next ion implanted into the polysilicon layer by using the photoresist layer as a mask. Different ion species are ion implanted into the semiconductor substrate and the polysilicon layer, respectively, by using the same photoresist layer, thus decreasing the number of photoetching steps in manufacture of semiconductor devices.

REFERENCES:
H. Koike, et al., "Process Simplification in Deep Submicron CMOS Fabrication", fourth IEEE/UCS/SEMI 1995 Int'l Symposium on Semiconductor Manufacturing.
Tadahiko Horiuchi, et al., "A 7-Mask CMOS Process with Selective Oxide Deposition", IEE Transactions on electronic devices, vol. 40, No. 8, Aug. 1993.
K. Kasai, et al., "W/WNx/Poly-Si Gate Technology for Future High Speed Deep Submicron CMOS LSIs", IEEE International Electron Devices Meeting 1994, Technical Digest pp. 497-500.

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