Method of manufacturing semiconductor device having gate electro

Details Method of manufacturing semiconductor device having gate electro Method of manufacturing semiconductor device having gate electro

1998-08-24

1999-10-19

Utech, Benjamin

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

438735, 438739, H01L 21302

Patent

active

059703440

ABSTRACT:
A channel layer is formed in a surface of a semiconductor substrate, and a plurality of trenches are formed in the surface of the semiconductor substrate, the trenches being deeper than the channel layer. Then, gate electrodes are formed in the trenches, respectively, after which body layers are formed between the trenches and source layers are formed adjacent to the trenches.

REFERENCES:
patent: 5514604 (1996-05-01), Brown
patent: 5578508 (1996-11-01), Baba
patent: 5688725 (1997-11-01), Darwish
patent: 5693547 (1997-12-01), Gardner

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