Semiconductor device manufacturing: process – Introduction of conductivity modifying dopant into... – Ion implantation of dopant into semiconductor region
Reexamination Certificate
2006-01-10
2008-08-19
Whitehead, Jr., Carl (Department: 2813)
Semiconductor device manufacturing: process
Introduction of conductivity modifying dopant into...
Ion implantation of dopant into semiconductor region
C438S530000, C438S199000, C438S592000, C257SE21635, C257SE21636
Reexamination Certificate
active
07413968
ABSTRACT:
A silicon film is formed on a first region and a second region, respectively of a semiconductor substrate; P-type impurities are selectively ion-implanted into the silicon film in the first region; a first annealing is carried out, thereby the P-type impurities implanted in the silicon film are activated; N-type impurities are selectively ion-implanted into the silicon film in the second region, after the first annealing; a silicide film is formed on the silicon film according to a CVD method, after the ion-implantation of the N-type impurities; a second annealing is carried out, thereby gas contained in the silicide film is discharged and the N-type impurities are activated; a barrier metal film and a metal film are formed in this order on the silicide film; and the metal film, the barrier metal film, the silicide film and the silicon film are patterned, thereby a P-type polymetal gate electrode formed in the first region and an N-type polymetal gate electrode formed in the second region.
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Chinese Office Action, with English Translation, issued in Chinese Patent Application No. 200610005789.5, dated on Nov. 30, 2007.
Elpida Memory Inc.
Jr. Carl Whitehead
Luke Daniel
McDermott Will & Emery LLP
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