Method of manufacturing semiconductor device having bipolar tran

Details Method of manufacturing semiconductor device having bipolar tran Method of manufacturing semiconductor device having bipolar tran

1997-12-15

2000-02-22

Bowers, Charles

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

438234, H01L 218238

Patent

active

060279621

ABSTRACT:
A method of manufacturing a semiconductor device can suppress an etching damage to a bipolar transistor part and a CMOS transistor part while simplifying a manufacturing process. According to this manufacturing method, an external base leader electrode layer which will form an external base leader electrode is used as an etching protection film for forming a CMOS transistor, and a layered film including a polycrystalline silicon film which will ultimately form a gate electrode is used as an etching protection film during formation of a bipolar transistor. Thereby, a step of forming the etching protection film can be utilized also as a step of forming the external base electrode and the gate electrode. Consequently, the etching damages to the bipolar transistor part and the CMOS transistor part are suppressed while simplifying the manufacturing process.

REFERENCES:
patent: 5026654 (1991-06-01), Tanba et al.
patent: 5192992 (1993-03-01), Kim et al.
patent: 5444003 (1995-08-01), Wang et al.
patent: 5471083 (1995-11-01), Ikeda et al.
patent: 5525530 (1996-06-01), Watabe

Affiliated with

Also associated with

Rating

Method of manufacturing semiconductor device having bipolar tran does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Method of manufacturing semiconductor device having bipolar tran, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Method of manufacturing semiconductor device having bipolar tran will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-519952