Semiconductor device manufacturing: process – Making field effect device having pair of active regions... – On insulating substrate or layer
Reexamination Certificate
2006-07-06
2008-10-28
Lindsay, Jr., Walter L. (Department: 2812)
Semiconductor device manufacturing: process
Making field effect device having pair of active regions...
On insulating substrate or layer
C438S158000
Reexamination Certificate
active
07442593
ABSTRACT:
In forming an electrode2on a silicon oxide film5on a semiconductor substrate4through a silicon oxide film5, for example, the gate electrode2is structured in a laminated structure of a plurality of polycrystalline silicon layers6. The portion of the gate electrode2is formed by a method of manufacturing a thin film having a process of depositing amorphous layers and a process of crystallizing (recrystallizing) this amorphous material. In this case, depositing of the amorphous layers is carried out dividedly by a plurality of times so that the thickness of an amorphous layer to be deposited at one time is not larger than a thickness to be prescribed by a critical stress value determined according to a fail event, the amorphous material is crystallized after each process of depositing each amorphous layer has been finished, and the process of depositing amorphous layers and the process of crystallizing the amorphous material are repeated, whereby a laminated structure of the polycrystalline layer 6 having a necessary film thickness is obtained. With the above-described arrangement, it is possible to prevent a deterioration of electric characteristics of a semiconductor device and an occurrence of a defect, such as a peeling off between layers, cracks in a layer, etc., and it is possible to obtain a polycrystalline layer of small grain size in a desired film thickness by a lamination of polycrystalline materials.
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Miura Hideo
Nakajima Takashi
Ohta Hiroyuki
Okamoto Noriaki
Antonelli, Terry Stout & Kraus, LLP.
Ford Kenisha V
Lindsay Jr. Walter L.
Renesas Technology Corp.
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