Semiconductor device manufacturing: process – Making field effect device having pair of active regions... – Having insulated gate
Reexamination Certificate
2007-07-17
2007-07-17
Vu, David (Department: 2818)
Semiconductor device manufacturing: process
Making field effect device having pair of active regions...
Having insulated gate
C438S531000
Reexamination Certificate
active
11292360
ABSTRACT:
A method of manufacturing a semiconductor device is provided that can suppress impurity concentration reduction in a doped channel region arising from formation of a gate insulating film. With a silicon oxide film (20) and a silicon nitride film (21) being formed, p-type impurity ions (231, 232) are implanted in a Y direction from diagonally above. As for an implant angle α of the ion implantation, an implant angle is adopted that satisfies the relationship tan−1(W2/T)<α≦tan−1(W1/T), where W1is an interval between a first portion (211) and a fourth portion (214) and an interval between a third portion (213) and a sixth portion (216); W2is an interval between a second portion (212) and a fifth portion (215); T is a total film thickness of the silicon oxide film (20) and the silicon nitride film (21). When the implant angle α is controlled within that range, impurity ions (231, 232) are implanted into a second side surface (10A2) and a fifth side surface (10A5) through a silicon oxide film (13).
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Horita Katsuyuki
Kobayashi Heiji
Tanaka Yoshinori
Oblon & Spivak, McClelland, Maier & Neustadt P.C.
Renesas Technology Corp.
Vu David
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