Method of manufacturing semiconductor device and substrate...

Details Method of manufacturing semiconductor device and substrate... Method of manufacturing semiconductor device and substrate...

2009-12-14

2011-12-06

Lebentritt, Michael (Department: 2829)

Semiconductor device manufacturing: process

Coating with electrically or thermally conductive material

To form ohmic contact to semiconductive material

C118S715000, C118S720000, C118S733000

Reexamination Certificate

active

08071477

ABSTRACT:
Formation of a boron compound is suppressed on the inner wall of a nozzle disposed in a high-temperature region of a process chamber. A semiconductor device manufacturing method comprises forming a boron doped silicon film by simultaneously supplying at least a boron-containing gas as a constituent element and a chlorine-containing gas a constituent element to a gas supply nozzle installed in a process chamber in a manner that concentration of chlorine (Cl) is higher than concentration of boron in the gas supply nozzle.

REFERENCES:
patent: 3279946 (1966-10-01), Schaarschmidt
patent: 6410383 (2002-06-01), Ma
patent: 2005/0079691 (2005-04-01), Kim et al.
patent: 2007/0034158 (2007-02-01), Nakaiso

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