Method of manufacturing semiconductor device and...

Details Method of manufacturing semiconductor device and... Method of manufacturing semiconductor device and...

2011-01-11

2011-01-11

Pert, Evan (Department: 2894)

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

C257S329000, C257SE29262

Reexamination Certificate

active

07867853

ABSTRACT:
There are provided a method of manufacturing a semiconductor device which is capable of narrowing only the width of a Fin channel while maintaining the widths of source and drain regions, and a semiconductor device. The method of manufacturing a semiconductor device is a method of manufacturing a Fin type transistor, including: forming STI region2with use of mask layer8formed over silicon substrate1as a mask; narrowing mask layer8by wet etching to form narrowed mask layer8a; forming stopper oxide film16over a surface of narrowed mask layer8a, depositing polysilicon17over an entire surface and then forming anti-reflective film18and photoresist19; forming an opening at photoresist19in a portion corresponding to a word line portion, removing anti-reflective film18and polysilicon17in that portion to expose narrowed mask layer8aand then removing photoresist19; and forming Fin channel30by etching portions of silicon substrate1which lie on opposite sides of and below narrowed mask layer8awith narrowed mask layer8aas a mask.

REFERENCES:
patent: 5963841 (1999-10-01), Karlsson et al.
patent: 7153733 (2006-12-01), Seo et al.
patent: 7396711 (2008-07-01), Shah et al.
patent: 2004/0007738 (2004-01-01), Fried et al.
patent: 2004/0262687 (2004-12-01), Jung et al.
patent: 2006-005344 (2006-01-01), None
patent: 2006-279010 (2006-10-01), None
patent: 2006-310458 (2006-11-01), None
patent: 2007-042790 (2007-02-01), None

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