Semiconductor device manufacturing: process – Coating with electrically or thermally conductive material – To form ohmic contact to semiconductive material
Reexamination Certificate
2006-12-26
2006-12-26
Le, Dung A. (Department: 2818)
Semiconductor device manufacturing: process
Coating with electrically or thermally conductive material
To form ohmic contact to semiconductive material
C435S091500, C435S091500, C435S091500, C435S091500
Reexamination Certificate
active
07153770
ABSTRACT:
A semiconductor device comprising a metal silicide film with uniform surface morphology and interface morphology and a method of manufacturing the same are provided. The metal silicide film of the semiconductor device exhibits low sheet resistance and excellent thermal stability. Therefore, by using the semiconductor device fabrication method, high performance, high quality semiconductor devices can be manufactured.
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Buchanan & Ingersoll & Rooney PC
Le Dung A.
Samsung Electronics Co,. Ltd.
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