Semiconductor device manufacturing: process – Coating of substrate containing semiconductor region or of... – Multiple layers
Reexamination Certificate
2011-04-19
2011-04-19
Richards, N Drew (Department: 2895)
Semiconductor device manufacturing: process
Coating of substrate containing semiconductor region or of...
Multiple layers
C438S597000, C438S618000, C438S703000, C438S778000, C438S791000
Reexamination Certificate
active
07928016
ABSTRACT:
A method for manufacturing a semiconductor device is provided that can reduce warping of manufactured products after the formation of a final protective film. The method includes, in a semiconductor device having a semiconductor substrate provided with wiring and a final protective film formed on the wiring, forming a first protective film on the wiring, forming a second protective film having tensile stress on the first protective film, and removing the first protective film and the second protective film from contact regions of the wiring.
REFERENCES:
patent: 2002/0110982 (2002-08-01), Watatani
patent: 2006/0077519 (2006-04-01), Floyd
patent: 2007/0080383 (2007-04-01), Yamakawa et al.
patent: 5006890 (1993-01-01), None
patent: 6291114 (1994-10-01), None
patent: 6333922 (1994-12-01), None
Garcia Joannie A
Oki Semiconductor Co., Ltd.
Rabin & Berdo P.C.
Richards N Drew
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