Method of manufacturing semiconductor device, and...

Semiconductor device manufacturing: process – Coating of substrate containing semiconductor region or of... – Multiple layers

Reexamination Certificate

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Details

C438S597000, C438S618000, C438S703000, C438S778000, C438S791000

Reexamination Certificate

active

07928016

ABSTRACT:
A method for manufacturing a semiconductor device is provided that can reduce warping of manufactured products after the formation of a final protective film. The method includes, in a semiconductor device having a semiconductor substrate provided with wiring and a final protective film formed on the wiring, forming a first protective film on the wiring, forming a second protective film having tensile stress on the first protective film, and removing the first protective film and the second protective film from contact regions of the wiring.

REFERENCES:
patent: 2002/0110982 (2002-08-01), Watatani
patent: 2006/0077519 (2006-04-01), Floyd
patent: 2007/0080383 (2007-04-01), Yamakawa et al.
patent: 5006890 (1993-01-01), None
patent: 6291114 (1994-10-01), None
patent: 6333922 (1994-12-01), None

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