Method of manufacturing semiconductor device

Radiation imagery chemistry: process – composition – or product th – Imaging affecting physical property of radiation sensitive... – Making electrical device

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430 5, 430 30, 430296, 430394, G03F 700, G03F 900

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06110647&

ABSTRACT:
A method of manufacturing a semiconductor device, comprises the steps of forming a first transfer pattern corresponding to a mask pattern on a major surface side of a semiconductor substrate through a first mask plate on which the first mask pattern having a straight portion and a bent portion is formed, and forming a second transfer pattern corresponding to a second mask pattern on a major surface side of the semiconductor substrate through a second mask plate on which the second mask pattern having a pattern arranged at a position corresponding to the straight portion is formed.

REFERENCES:
patent: 5308741 (1994-05-01), Kemp
patent: 5723233 (1998-03-01), Garza
patent: 5879843 (1999-03-01), Ueno
A. Starikov; Use of a Single Size Square Serif for Variable Print Bias Compensation in Microlithography: Method, Design and Practice; SPIE vol. 1088 Optical/ Laser Microlithography II (1989), pp. 34-46.

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