Method of manufacturing semiconductor device

Semiconductor device manufacturing: process – Coating with electrically or thermally conductive material – Insulated gate formation

Reexamination Certificate

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Details

C438S299000, C438S664000, C257SE21593

Reexamination Certificate

active

08053347

ABSTRACT:
A method of manufacturing a semiconductor device, including forming a plurality of gate structures on a substrate, the gate structures each including a hard mask pattern stacked on a gate conductive pattern, forming an insulating layer pattern between the gate structures at least partially exposing a top surface of the hard mask pattern, forming a trench that exposes at least a top surface of the gate conductive pattern by selectively removing the hard mask pattern, and forming a silicide layer on the exposed gate conductive pattern.

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