Semiconductor device manufacturing: process – Coating with electrically or thermally conductive material – Insulated gate formation
Reexamination Certificate
2009-02-13
2011-11-08
Pham, Thanhha (Department: 2894)
Semiconductor device manufacturing: process
Coating with electrically or thermally conductive material
Insulated gate formation
C438S299000, C438S664000, C257SE21593
Reexamination Certificate
active
08053347
ABSTRACT:
A method of manufacturing a semiconductor device, including forming a plurality of gate structures on a substrate, the gate structures each including a hard mask pattern stacked on a gate conductive pattern, forming an insulating layer pattern between the gate structures at least partially exposing a top surface of the hard mask pattern, forming a trench that exposes at least a top surface of the gate conductive pattern by selectively removing the hard mask pattern, and forming a silicide layer on the exposed gate conductive pattern.
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Cho Byung-Kyu
Choi Dong-Uk
Kang Hee-Soo
Lee Choong-Ho
Lee & Morse P.C.
Pham Thanhha
Samsung Electronics Co,. Ltd.
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