Semiconductor device manufacturing: process – Making field effect device having pair of active regions... – Having insulated gate
Reexamination Certificate
2009-03-27
2010-12-28
Ghyka, Alexander G (Department: 2812)
Semiconductor device manufacturing: process
Making field effect device having pair of active regions...
Having insulated gate
C438S196000, C438S219000, C257SE21546, C257SE21642
Reexamination Certificate
active
07858467
ABSTRACT:
A method of manufacturing a semiconductor device according to an embodiment of the present invention includes forming, on a surface of a semiconductor substrate, an isolation trench including sidewall parts and a bottom part, or a stepped structure including a first planar part, a second planar part, and a step part located at a boundary between the first planar part and the second planar part, and supplying oxidizing ions or nitriding ions contained in plasma generated by a microwave, a radio-frequency wave, or electron cyclotron resonance to the sidewall parts and the bottom part of the isolation trench or the first and second planar parts and the step part of the stepped structure by applying a predetermined voltage to the semiconductor substrate, to perform anisotropic oxidation or anisotropic nitridation of the sidewall parts and the bottom part of the isolation trench or the first and second planar parts and the step part of the stepped structure.
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Sep. 21, 2010. I Examiner: Initial if reference considered, whether or not citation is in conformance with Mpep 609. Draw line through citation if not in conformance and not considered. Include copy of this form with next communication to applicant. •.
Kamioka Isao
Kato Ryu
Ozawa Yoshio
Shiozawa Jun-ichi
Finnegan Henderson Farabow Garrett & Dunner L.L.P.
Ghyka Alexander G
Kabushiki Kaisha Toshiba
Nikmanesh Seahvosh J
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