Method of manufacturing semiconductor device

Details Method of manufacturing semiconductor device Method of manufacturing semiconductor device

2008-07-02

2010-06-22

Wilczewski, Mary (Department: 2822)

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

C438S424000, C257SE21634, C257SE21546

Reexamination Certificate

active

07741185

ABSTRACT:
Each of channel regions2aand3bis covered by a gate electrode6via a gate insulation film5and side wall spacers9from its top face to both side faces along an x-direction. In other words, there is no insulation material of an STI element isolation structure4on both side faces along the x-direction of each of the channel regions2band3b(in a non-contact state), thereby preventing stress in a z-direction from being applied by the STI element isolation structure4to each of the channel region2band3b.

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