Method of manufacturing semiconductor device

Details Method of manufacturing semiconductor device Method of manufacturing semiconductor device

2008-03-25

2009-11-03

Mulpuri, Savitri (Department: 2812)

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

C438S232000, C438S259000, C438S270000, C257SE21147, C257SE21384, C257SE21421

Reexamination Certificate

active

07611947

ABSTRACT:
A method of manufacturing a semiconductor device of the present invention consists of forming a trench in a trench-type cell transistor region; forming a gate insulating film and a gate material layer on a semiconductor substrate; forming a photoresist layer on the semiconductor substrate so as to expose extension region formation portions of the trench-type cell transistor region and a high breakdown voltage transistor region; forming extension regions in each region by performing ion implantation in the semiconductor substrate surface of the trench-type cell transistor region and the high breakdown voltage transistor region and then patterning gates, and forming extension regions of an ordinary breakdown voltage transistor by covering the trench-type cell transistor region and the high breakdown voltage transistor region with a photoresist layer and implanting ions in the ordinary breakdown voltage transistor region.

REFERENCES:
patent: 2005/0263843 (2005-12-01), Sakakibara
patent: 2008/0173943 (2008-07-01), Kang
patent: 11-17024 (1999-01-01), None
patent: 2001-332634 (2001-11-01), None
patent: 2004-281746 (2004-10-01), None

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