Method of manufacturing semiconductor device

Details Method of manufacturing semiconductor device Method of manufacturing semiconductor device

2007-06-05

2009-06-30

Doan, Theresa T (Department: 2814)

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

C438S271000, C438S268000, C257S341000

Reexamination Certificate

active

07553731

ABSTRACT:
A semiconductor device having SJ structure has a peripheral region having a higher withstand voltage than the withstand voltage of the cell region. A semiconductor upper layer including second conductivity-type impurities and a semiconductor lower layer including first conductivity-type impurities whose concentration is lower than the first portion region constituting the combination of the cell region are formed in the semiconductor layer of the peripheral region. A field oxide layer is formed on a surface of the semiconductor upper layer.

REFERENCES:
patent: 5216275 (1993-06-01), Chen
patent: 6512268 (2003-01-01), Ueno et al.
patent: 6551909 (2003-04-01), Fujihira
patent: 6639260 (2003-10-01), Suzuki et al.
patent: 6693338 (2004-02-01), Saitoh et al.
patent: 6700141 (2004-03-01), Iwamoto et al.
patent: 6724042 (2004-04-01), Onishi et al.
patent: 6768138 (2004-07-01), Kitada et al.
patent: 6825565 (2004-11-01), Onishi et al.
patent: 6844592 (2005-01-01), Yamaguchi et al.
patent: 2001/0028083 (2001-10-01), Onishi et al.
patent: 2002/0074596 (2002-06-01), Suzuki et al.
patent: 2003/0160262 (2003-08-01), Kitada et al.
patent: 2003/0222327 (2003-12-01), Yamaguchi et al.
patent: 2003/0224588 (2003-12-01), Yamauchi et al.
patent: 2004/0016959 (2004-01-01), Yamaguchi et al.
patent: 2004/0094819 (2004-05-01), Saitoh et al.
patent: 2005/0077572 (2005-04-01), Yamaguchi et al.
patent: A-2004-22716 (2004-01-01), None
patent: WO 2005/020275 (2005-03-01), None
Advisory Action dated Mar. 25, 2008 in U.S. Appl. No. 11/301,249.
U.S. Appl. No. 11/211,524, filed Aug. 26, 2005, Yamaguchi et al.
Notice of Allowance dated May 1, 2008 in U.S. Appl. No. 11/301,249.
Office Action dated Jun. 26, 2007 in parent U.S. Appl. No. 11/301,249.
Office Action dated Sep. 21, 2007 in corresponding Chinese Patent Application No. 200510129496.3 (and English translation).
Office Action dated Dec. 6, 2007 in parent U.S. Appl. No. 11/301,249.

Affiliated with

Also associated with

Rating

Method of manufacturing semiconductor device does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Method of manufacturing semiconductor device, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Method of manufacturing semiconductor device will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-4114445