Method of manufacturing semiconductor device

Details Method of manufacturing semiconductor device Method of manufacturing semiconductor device

2005-01-24

2009-02-03

Luu, Chuong A. (Department: 2892)

Semiconductor device manufacturing: process

Coating with electrically or thermally conductive material

Insulated gate formation

C438S664000, C438S755000, C438S655000

Reexamination Certificate

active

07485558

ABSTRACT:
In a method of manufacturing a semiconductor device, a preliminary metal silicide layer is selectively formed on a substrate having a transistor, the transistor having source/drain regions. A capping layer having a thermal expansion coefficient greater than that of the preliminary metal silicide layer is formed on the substrate having the preliminary metal silicide layer. The substrate is thermally treated to form a metal silicide layer, and to apply a tensile stress caused by a thermal expansion coefficient difference between the metal silicide layer and the capping layer to the source/drain regions of the transistor.

REFERENCES:
patent: 5003375 (1991-03-01), Ichikawa
patent: 5792684 (1998-08-01), Lee et al.
patent: 6097077 (2000-08-01), Gordon et al.
patent: 6194256 (2001-02-01), Lee et al.
patent: 6329276 (2001-12-01), Ku et al.
patent: 6372569 (2002-04-01), Lee et al.
patent: 6573172 (2003-06-01), En et al.
patent: 7041543 (2006-05-01), Varadarajan et al.
patent: 2003/0040158 (2003-02-01), Saitoh
patent: 2005/0170104 (2005-08-01), Jung et al.
patent: 00-36605 (2000-02-01), None
patent: 98-0138959 (1998-02-01), None
patent: 10-0271948 (2000-08-01), None

Affiliated with

Also associated with

Rating

Method of manufacturing semiconductor device does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Method of manufacturing semiconductor device, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Method of manufacturing semiconductor device will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-4101265