Method of manufacturing semiconductor device

Details Method of manufacturing semiconductor device Method of manufacturing semiconductor device

2007-09-07

2009-10-20

Coleman, W. David (Department: 2823)

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

C257S314000, C257S315000, C257SE21170, C257SE21626, C257SE21640, C438S184000, C438S230000, C438S265000

Reexamination Certificate

active

07605044

ABSTRACT:
A method of manufacturing a semiconductor device including at least one step of: forming a transistor on and/or over a semiconductor substrate; forming silicide on and/or overa gate electrode and a source/drain region of the transistor; removing an uppermost oxide film from a spacer of the transistor; and forming a contact stop layer on and/or over the entire surface of the substrate including the gate electrode.

REFERENCES:
patent: 7371629 (2008-05-01), Fu et al.
patent: 7423330 (2008-09-01), Satoh
patent: 2002/0127763 (2002-09-01), Arafa et al.
patent: 2004/0072435 (2004-04-01), Quek
patent: 2008/0096331 (2008-04-01), Chen et al.

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