Method of manufacturing semiconductor device

Details Method of manufacturing semiconductor device Method of manufacturing semiconductor device

2007-02-20

2009-06-09

Doan, Theresa T (Department: 2814)

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

C438S199000, C438S275000, C257S369000

Reexamination Certificate

active

07544555

ABSTRACT:
A dummy oxide film having a film thickness that is the same as that of a gate oxide film of a high voltage transistor is formed on a gate electrode of a transistor, and the dummy oxide film and the gate oxide film formed on a substrate surface are removed at the same time during etching for spacer formation. Thus, it becomes possible to stably form a spacer width that sufficiently satisfies device characteristics when manufacturing a semiconductor device where a low voltage transistor and a high voltage transistor are formed on the same semiconductor substrate.

REFERENCES:
patent: 5960288 (1999-09-01), Hong et al.
patent: 6436747 (2002-08-01), Segawa et al.
patent: 6541823 (2003-04-01), Yoshiyama et al.
patent: 7148097 (2006-12-01), Yu et al.
patent: 2006/0105557 (2006-05-01), Klee et al.
patent: 2003060067 (2003-02-01), None

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