Method of manufacturing semiconductor device

Details Method of manufacturing semiconductor device Method of manufacturing semiconductor device

2005-04-06

2008-12-23

Dang, Phuc T (Department: 2892)

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

C438S238000, C438S250000, C257S296000, C257S297000

Reexamination Certificate

active

07468297

ABSTRACT:
A method of manufacturing semiconductor device comprising forms a first impurity diffusion region as a lower electrode of a capacitor in a first area of a semiconductor substrate by implanting impurities at a first dose; forms a second impurity diffusion region in a second area, at the end part of the semiconductor substrate, by implanting impurities at a second dose; and forms, by a thermal oxidation method, a capacitor insulation film having a first thickness on the first impurity diffusion region and forms an oxide film having a second thickness which is thicker than the first thickness on the second area.

REFERENCES:
patent: 6764930 (2004-07-01), Chu et al.

Affiliated with

Also associated with

Rating

Method of manufacturing semiconductor device does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Method of manufacturing semiconductor device, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Method of manufacturing semiconductor device will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-4051080