Method of manufacturing semiconductor device

Details Method of manufacturing semiconductor device Method of manufacturing semiconductor device

2006-12-26

2008-07-08

Geyer, Scott B. (Department: 2812)

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

C438S264000, C438S700000, C438S709000, C257SE21218, C257SE21259

Reexamination Certificate

active

07396725

ABSTRACT:
A method of manufacturing a semiconductor device includes forming an insulating layer, a first conductive layer, a dielectric layer and a capping conductive layer over a semiconductor substrate in which a cell region is defined. The capping conductive layer and the dielectric layer is etched to form contact holes in a first region of a drain select line and a source select line region of the cell region. A second conductive layer, a tungsten silicide layer and a hard mask layer are formed over the semiconductor substrate including the contact holes. The hard mask layer, the tungsten silicide layer, the second conductive layer, the capping conductive layer, the dielectric layer and the first conductive layer are etched to form a cell gate. The hard mask layer, the tungsten silicide layer, the second conductive layer and the first conductive layer of the first region are etched to form a drain select line and a source select line.

REFERENCES:
patent: 2007/0284645 (2007-12-01), Lee et al.
patent: 2008/0002471 (2008-01-01), Lee
patent: 10-2001-0063856 (2001-07-01), None
patent: 10-2002-0076455 (2002-10-01), None
patent: 10-2005-0052177 (2005-06-01), None
patent: 10-2005-0073043 (2005-07-01), None
patent: 10-2006-0038632 (2006-05-01), None

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