Method of manufacturing semiconductor device

Details Method of manufacturing semiconductor device Method of manufacturing semiconductor device

2007-11-06

2007-11-06

Tsai, H. Jey (Department: 2812)

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

C438S294000, C438S981000

Reexamination Certificate

active

11276731

ABSTRACT:
A method of manufacturing a semiconductor device has the steps of: preparing a semiconductor substrate having a structure in which first and second active regions are isolated by a field oxide; forming a first insulation film and a first film on the semiconductor substrate; exposing the first active region in the first active region; forming a second insulation film and a first conductive film over the first active region, the second insulation film being thicker than the first insulation film; processing the first conductive film and the second insulation film into a first gate electrode and a first gate insulation film; exposing the second active region in the second active region; forming a third insulation film and a second conductive film on the over the second active region, the third insulation film being thinner than the second insulation film; and processing the second conductive film and the third insulation film into a second gate electrode and a second gate insulation film.

REFERENCES:
patent: 5712178 (1998-01-01), Cho et al.
patent: 5861347 (1999-01-01), Maiti et al.
patent: 6133093 (2000-10-01), Prinz et al.
patent: 2002/0111046 (2002-08-01), Park et al.
patent: 2004/0169250 (2004-09-01), Kobayashi
patent: 2000/150665 (2000-05-01), None
patent: 2000/200836 (2000-07-01), None
patent: 2002/246480 (2002-08-01), None

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