Method of manufacturing semiconductor device

Details Method of manufacturing semiconductor device Method of manufacturing semiconductor device

2007-06-26

2007-06-26

Deo, Duy-Vu N. (Department: 1765)

Semiconductor device manufacturing: process

Chemical etching

Combined with coating step

C438S706000, C438S725000

Reexamination Certificate

active

10788216

ABSTRACT:
A method of manufacturing a semiconductor device comprises preparing a working film to be processed, forming an adhesion improving region on the working film for increasing an adhesion between the working film and a mask material containing carbon, forming the mask material on the working film, forming a resist pattern on the mask material, the mask material having a higher etching resistance for the working film than the resist pattern, transferring the pattern of the resist pattern onto the mask material, and etching the working film by using the mask material as a mask.

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patent: 01-309054 (1989-12-01), None
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Office Action Mailed Jul. 25, 2006, Japanese Patent Application No. 2003-053182.
English Translation of Office Action Mailed Jul. 25, 2006, Japanese Patent Application No. 2003-053182.
English Language Abstract of JP 01-309054, no date.
English Language Derwent Abstact of JP 10-041213, no date.
English Language Derwent Abstract of JP 2002-270584.

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